PART |
Description |
Maker |
CM400HB-90H |
2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules 400 A, 4500 V, N-CHANNEL IGBT
|
Mitsubishi Electric Semiconductor
|
CM400HB-90H |
2nd-Version HVIGBT Modules
|
Mitsubishi Electric
|
CM200HG-130H |
HVIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
CM1200HA-34H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
|
Mitsubishi Electric Corporation
|
CM800HA-50H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
|
Mitsubishi Electric Corporation
|
CM800HB-66H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
|
Mitsubishi Electric Corporation
|
CM1200HB-66H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
|
Mitsubishi Electric Corporation
|
CM1200HC-66H |
HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
|
MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
CM1800HC-34N |
Single IGBTMOD HVIGBT Module 1800 Amperes/1700 Volts
|
Powerex Power Semiconductors
|
QID3310006 |
Dual IGBT HVIGBT Module 100 Amperes/3300 Volts
|
Powerex Power Semicondu...
|